This document describes the features and characteristics of the 66 Silicon NPN Epitaxial Planar Transistor, which is suitable for audio and general purpose applications. It includes IC-VCE characteristics, hFE-IC characteristics, hFE-IC temperature characteristics, IC-VBE temperature characteristics, VCE(sat)-IB characteristics, Pc-Ta derating safe operating area, and fT-IE characteristics.
The 2SC3519/3519A is a silicon NPN epitaxial planar transistor intended for audio and general‑purpose applications. It is supplied in an MT‑100 (TO‑3P) package and weighs approximately 6 g.
Key electrical parameters include a collector‑emitter voltage rating of 12 V, a maximum collector current of 5 A, a base‑emitter voltage of 5 V, and a typical DC current gain of about 200. The datasheet also lists absolute maximum ratings, typical switching characteristics, and safe operating area curves for various temperature conditions.
| Collector‑Emitter Voltage (VCE max) | 12 V |
|---|---|
| Package | MT‑100 (TO‑3P) |
| Weight | ≈6.0 g |
The maximum collector‑emitter voltage is 12 V.
It is supplied in an MT‑100 (TO‑3P) package.