2SC3263 is a NPN type transistor produced by Toshiba of Japan. Its maximum collector-emitter reverse voltage is 230V, maximum collector-emitter voltage is 230V, maximum emitter junction voltage is 5V, maximum collector current is 15A, maximum base current is 4A, maximum power consumption is 130W (junction temperature is 25℃), and maximum storage temperature is 150℃.
This datasheet provides the electrical and thermal specifications for the silicon NPN epitaxial planar transistor 2SC3263, intended for audio and general‑purpose applications. It includes absolute maximum ratings, typical performance curves, and package dimensions.
Key parameters such as collector‑emitter voltage (230 V), collector current (15 A), transition frequency (1 MHz), and power dissipation (130 W) are listed together with operating temperature limits and typical switching characteristics.
| Collector‑Emitter Voltage (VCEmax) | 230 V |
|---|---|
| Power Dissipation (Pc) | 130 W (25 °C) |
| Package | TO‑3P |
The maximum collector‑emitter voltage is 230 V.