This datasheet provides the key electrical characteristics of the Microsemi 1N3161‑1N3177 diode series, including peak reverse voltage, forward current limits, surge capability and typical forward/reverse characteristic curves. It also lists the recommended operating conditions such as temperature range and mounting requirements.
Mechanical dimensions, thermal resistance values, mounting torque and weight are detailed, along with notes on polarity options and construction features such as glass‑to‑metal seal and rugged design.
| Peak reverse voltage (VRRM) | 50‑1600 V |
|---|---|
| Max average forward current (IF(AV)) | 240 A |
| Max surge current (IFSM) | 3000 A |
| Max peak forward voltage (VFM) | 1.25 V |
| Max peak reverse current (IRRM) | 10 mA |
| Junction‑to‑case thermal resistance | 0.20 °C/W |
| Case‑to‑sink thermal resistance | 0.08 °C/W |
| Mounting torque | 300‑325 in·lb |
| Weight | 8.5 oz (240 g) |
| Operating junction temperature range | -65 °C to 200 °C |
The maximum average forward current is 240 A.
They support a peak reverse voltage from 50 V up to 1600 V.
Junction‑to‑case thermal resistance is 0.20 °C/W and case‑to‑sink thermal resistance is 0.08 °C/W.
A mounting torque of 300‑325 in·lb is recommended.