1n6103 is a double-sided Schottky diode, its main features include: low reverse voltage (vrr), low leakage current (id), high breakdown voltage (vb), high reverse recovery time (trr), low junction capacitance (cj) and high switching speed. 1n6103 can be used for various applications, including but not limited to switching power supplies, pulse power supplies, power electronics equipment, automotive electronics equipment and lighting applications.
The Microsemi 1N6103‑1N6137 series provides high‑surge capacity transient protection for critical circuits. Features include triple‑layer passivation, sub‑miniature hermetically sealed glass packages, and the lowest available dynamic impedance and reverse leakage.
The datasheet lists maximum ratings such as operating temperature from –65 °C to +175 °C, surge power options of 500 W and 1500 W, and detailed electrical characteristics, mechanical specifications, and derating curves for various pulse widths and ambient temperatures.
| Operating Temperature | -65 °C to +175 °C |
|---|---|
| Storage Temperature | -65 °C to +200 °C |
| Surge Power | 500 W / 1500 W |
| Maximum Power Dissipation | 500 W (500 Watt max) |
| Package Type | Hermetically sealed glass |
| Lead Material | Tinned copper or silver‑clad copper |
The devices operate from –65 °C up to +175 °C.
Both 500 W and 1500 W surge power options are offered.
They are housed in a voidless hermetically sealed glass package.
The leads are made of tinned copper or silver‑clad copper.