2N1483, 2N1484, 2N1485, 2N1486 are a series of NPN silicon medium power transistors with a rated collector-emitter voltage of 40V, collector-emitter breakdown voltage of 55V, collector-base voltage of 60V, emitter-base voltage of 12V, collector current of 3.0A, and total power dissipation of 1.75W and 25W.
This datasheet provides the electrical characteristics, maximum ratings, and derating information for the Microsemi 2N1483, 2N1484, 2N1485, and 2N1486 NPN silicon medium‑power transistors. Key parameters such as collector‑emitter voltage, collector‑base voltage, continuous collector current, and power dissipation are listed.
Additional sections cover package outline, dynamic and switching characteristics, and operating temperature limits. The document includes forward‑current transfer ratios, saturation voltages, and turn‑on/off timing details useful for design engineers.
| Collector‑Emitter Voltage (Vceo) | 40 V (2N1483) / 35 V (2N1484) |
|---|---|
| Collector‑Base Voltage (Vcbo) | 60 V (2N1483) / 100 V (2N1484) |
| Continuous Collector Current (Ic) | 3.0 A |
| Total Power Dissipation at 25 °C | 1.75 W |
| Operating Temperature Range | -65 °C to +200 °C |
The maximum collector‑emitter voltage for the 2N1483 is 40 V.
They are rated for a continuous collector current of 3.0 A.
The devices operate from –65 °C up to +200 °C.
They can dissipate up to 1.75 W at a case temperature of 25 °C.