STMicroelectronics USB6B1 Datasheet

This document describes the STMicroelectronics USB6B1 product, which is a protector for transient overvoltage protection in sensitive equipment. It is suitable for various interfaces and lines, and features integrated clamping protection and high ESD protection level.


STMicroelectronics USB6B1 Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
122 KB
Published
12 April, 2012
Updated
29 September, 2023
MD5 checksum
7CABE25E9C10095B468AC19AA93FF2E8

About this manual

The USB6B1 protects the two USB data lines (D+ and D‑) and the power rails from fast transient over‑voltages. It is intended for applications where ESD protection is required, such as USB ports, RS‑423/RS‑485 interfaces, ISDN equipment, T1/E1 line cards and HDSL/ASDL interfaces.

Key features include a full diode bridge with integrated clamping, a 6 V breakdown voltage, 500 W peak pulse power dissipation (8/20 µs), 25 A surge current capability, and very low capacitance (25 pF) to maintain signal integrity at high data rates. The device is supplied in a compact SO‑8 package and complies with MIL‑STD‑883C, IEC 61000‑4‑2 and Class 3 ESD standards.

What's inside

  • Applications
  • Features
  • Benefits
  • Technical information
  • Surge protection
  • Universal Serial Bus
  • Telecom and datacom applications
  • Ordering information
  • Revision history
  • Legal disclaimer

Specifications

Breakdown voltage (V_ER)6 V min.
Peak pulse power (P_PP)500 W (8/20 µs)
Storage temperature range-55 °C to +150 °C
Operating temperature range-40 °C to +85 °C
Leakage current10 pA
PackageSO‑8

Frequently asked questions

What external capacitor is recommended to improve ESD protection?

A 100 nF capacitor should be placed close to the USB6B1 between VCC and ground.

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