PD57006 is an N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz.
The PD57006/PD57006S is a common‑source N‑channel lateral MOSFET designed for high‑gain, broadband RF applications such as car mobile radios. It operates up to 1 GHz, offers excellent linearity, and is mounted in ST's first true SMD plastic RF power package, PowerSO‑10RF.
Key specifications include a maximum drain‑source voltage of 65 V, gate‑source voltage of +20 V, and a typical output power of 6 W at 945 MHz with 28 V supply. The device provides a gain of about 14‑15 dB and operates with a drain current up to 20 A. Mounting recommendations are available on ST’s website (application note AN1294).
| Drain‑Source Voltage (Vds) max | 65 V |
|---|---|
| Gate‑Source Voltage (Vgs) max | +20 V |
| Power Dissipation (Pd) max | 20 W |
| Operating Junction Temperature (Tj) max | 165 °C |
| Typical Output Power at 945 MHz, 28 V | 6 W |
The maximum drain‑source voltage is 65 V.
It can deliver up to 6 W of output power.
Mounting recommendations are available on ST’s website (look for application note AN1294).
It is housed in the PowerSO‑10RF plastic SMD package.