MMFT960T1 is a N channel Power MOSFET with a maximum voltage of 60V and a maximum current of 300mA. It is packaged in SOT-223.
The MMFT960T1 Power MOSFET is designed for high‑speed, low‑loss power switching applications such as switching regulators, dc‑dc converters, solenoid and relay drivers. It is housed in an SOT‑223 (TO‑261) surface‑mount package suitable for medium‑power designs.
Key specifications include a 60 V drain‑to‑source breakdown voltage, 300 mA continuous drain current, 0.8 W total power dissipation at 25 °C, and a typical on‑resistance of 1.7 Ω. Thermal resistance is 156 °C/W, and the device can be soldered up to 260 °C. Ordering options are available in tape‑and‑reel form.
| Drain-to-Source Voltage (Vds) | 60 V |
|---|---|
| Drain Current (Id) | 300 mA |
| Total Power Dissipation (Ptot) | 0.8 W |
| Thermal Resistance (RθJA) | 156 °C/W |
| Gate Threshold Voltage (Vgs(th)) | 1.0 – 3.5 V |
| On‑Resistance (Rds(on)) | 1.7 Ω (typ) |
The maximum drain‑to‑source voltage is 60 V.
It is supplied in a SOT‑223 (TO‑261) surface‑mount package.
The maximum temperature for soldering is 260 °C.
It is available as MMFT960T1 SOT‑223 1000 Tape & Reel (Pb‑Free).