STW26NM60 is a 600V-0.125Ω-30A N-channel MOSFET with typical RDS(on)=0.125Ω, high dv/dt and avalanche capabilities, improved ESD capability, low input capacitance and gate charge and low gate input resistance. It is suitable for increasing the power density of high voltage converters, allowing system miniaturization and higher efficiencies.
The STW26NM60 is part of STMicroelectronics' MDmesh™ MOSFET family, featuring a multiple‑drain process and PowerMESH™ horizontal layout that delivers low on‑resistance, high dv/dt, and excellent avalanche capability. The device includes integrated back‑to‑back Zener diodes for enhanced ESD protection and to absorb gate‑source transients without external components.
Key electrical specifications include a 600 V drain‑source rating, 30 A continuous drain current at 25 °C, typical Rds(on) of 0.125 Ω, and a total power dissipation of 313 W. The MOSFET is suited for high‑voltage converters where power density, miniaturisation, and efficiency are critical.
| Drain‑Source Voltage (Vds) | 600 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 30 A |
| Typical On‑Resistance (Rds(on)) | 0.125 Ω |
| Total Power Dissipation (Pd) | 313 W |
| Avalanche Current (Ia) | 13 A |
The device is rated for a maximum drain‑source voltage of 600 V.
The typical on‑resistance is 0.125 Ω.
It can conduct up to 30 A continuously at 25 °C.