STMicroelectronics STS11NF30L N-Channel Power MOSFET Datasheet

sts11nf30l is a low voltage, high current n-channel mosfet released by stmicroelectronics. the rated on-resistance is less than 0.01 ohms, the rated voltage is 30v, and the rated current is 11a. it is packaged in so-8.


STMicroelectronics STS11NF30L N-Channel Power MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
power switch
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
330 KB
Published
11 April, 2012
Updated
30 September, 2023
MD5 checksum
BEE1BB537312B87EDB088928259D8411

About this manual

The STS11NF30L is a 30 V N‑channel power MOSFET in an SO‑8 package, featuring a typical on‑resistance of 0.0085 Ω and a continuous drain current of 11 A. It is designed for high‑efficiency CPU core DC/DC converters and automotive applications, offering reduced conduction losses and robust avalanche characteristics.

The datasheet provides absolute maximum ratings, detailed electrical and thermal characteristics, switching performance, and mechanical dimensions. It includes typical application circuits, test setups, and graphs for gate charge, transconductance, and temperature‑dependent parameters.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Thermal Data
  • Switching Characteristics
  • Mechanical Data

Specifications

Drain‑source Voltage (Vds)30 V
Continuous Drain Current (Id) at 25 °C11 A
Total Power Dissipation (Pd)2.5 W
Typical On‑Resistance (Rds(on))0.0085 Ω
Gate Charge (Qg)22.5 nC
Thermal Resistance Junction‑to‑Ambient (RθJA)50 °C/W
PackageSO‑8

Frequently asked questions

What is the maximum continuous drain current at 25 °C?

The device can handle up to 11 A of continuous drain current at 25 °C.

What is the typical on‑resistance of the STS11NF30L?

The typical on‑resistance is 0.0085 Ω at a drain‑source voltage of 10 V.

What is the maximum gate charge at 5 V?

The total gate charge is 22.5 nC when the gate voltage is 5 V.

What is the thermal resistance from junction to ambient?

The junction‑to‑ambient thermal resistance is specified as 50 °C/W.

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