Introduced the features and characteristics of M29W320ET, M29W320EB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory, including the supply voltage, access time, programming time, memory blocks, erase suspend and resume modes, unlock bypass programming command, VPP/WP pin, temporary block unprotected mode, common flash interface, extended memory block, low power consumption, programming/erase cycles and electronic signature.
This document describes the M29W320ET and M29W320EB 32‑Mbit flash memory products. It includes a features summary, electrical characteristics, package dimensions, pin‑out tables, and detailed command interface information. The memory is available in TSOP48 (12 × 20 mm) and TFBGA48 (6 × 8 mm) packages and supports both 8‑bit and 16‑bit data widths.
The datasheet also covers block organization (63 main blocks and 8 parameter blocks), extended block usage, programming/erase timing, maximum ratings, and status register definitions. Revision history and manufacturer disclaimer are provided at the end of the document.
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
|---|---|
| Fast Program Voltage (VPP) | 12 V (optional) |
| Access Times | 70 ns, 90 ns |
| Programming Time per Byte | 10 µs typical |
| Endurance (Program/Erase Cycles per Block) | 100,000 cycles |
| Memory Capacity | 32 Mbit (4 MByte) – 4 Mb × 8 or 2 Mb × 16 |
| Number of Main Blocks | 63 |
| Number of Parameter Blocks | 8 |
The device operates from 2.7 V to 3.6 V for normal program, erase, and read operations.
Each block is rated for 100,000 program/erase cycles.
Typical programming time is 10 µs per byte or word.