The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. It is produced by Cypress Semiconductor Corporation. It has 55, 70 ns access times and is easy to expand memory with CE1, CE2, and OE features. It has TTL-compatible inputs and outputs, and automatic power-down when deselected.
The CY6264 is a high‑performance CMOS static RAM organized as 8192 words by 8 bits. It offers easy memory expansion with separate chip‑enable signals (CE1, CE2) and an automatic power‑down feature that reduces consumption when the device is deselected.
The document lists key electrical characteristics such as 55 ns and 70 ns access times, supply voltage range of –0.5 V to +7.0 V, maximum operating current of 100 mA, and standby current of 20 mA. It also includes pin‑out diagrams, timing waveforms, typical DC/AC characteristics, and ordering information for the 28‑lead SOIC package.
| Access time | 55 ns (CY6264‑55) / 70 ns (CY6264‑70) |
|---|---|
| Supply voltage range | –0.5 V to +7.0 V |
| Maximum operating current | 100 mA |
| Maximum standby current | 20 mA (typical) |
The CY6264‑55 version has a 55 ns access time, while the CY6264‑70 version has a 70 ns access time.
The device includes an automatic power‑down when deselected, reducing power consumption by over 70 %.
The device operates from –55 °C to +125 °C with power applied.