This document describes the features and characteristics of STMicroelectronis STD17NF03L and STD17NF03L-1 N-channel power MOSFETs, including exceptional dv/dt capability, low gate charge at 100°C, application oriented characterization, and 100% avalanche tested. The product is suitable for switching applications.
The STD17NF03L and STD17NF03L-1 are N‑channel 30 V Power MOSFETs offered in DPAK and IPAK packages. They feature low gate charge, high avalanche capability, and excellent dv/dt performance, making them suitable for switching applications.
The document includes absolute maximum ratings, detailed electrical characteristics (on‑resistance, gate charge, capacitances), test circuit diagrams, mechanical package data, and revision history. It serves as a reference for designers needing precise specifications and test setups for these devices.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 17 A |
| Total power dissipation | 30 W |
| Maximum pulsed drain current | 68 A |
The device can handle up to 17 A continuous drain current at 25 °C.
The MOSFET is rated for a total dissipation of 30 W at 25 °C.