This document introduces a high-performance power MOSFET product designed by STMicroelectronics, which has high operating voltage and low resistance characteristics, suitable for switching applications.
The handbook provides the electrical ratings, characteristic curves and mechanical data for the STP4N150 (TO‑220) and STW4N150 (TO‑247) high‑voltage N‑channel Power MOSFETs. It includes absolute maximum ratings, on‑state resistance, gate charge, capacitances and avalanche specifications.
Additional sections cover test circuit recommendations, package dimensions, thermal impedance graphs and a revision history. The document ends with legal notices and STMicroelectronics contact information.
| Drain‑source voltage (VDS) | 1500 V |
|---|---|
| Gate‑source voltage (VGS max) | +30 V |
| Continuous drain current (25 °C) | 4 A |
| Continuous drain current (100 °C) | 2.5 A |
| Pulsed drain current | 12 A |
| Total dissipation (25 °C) | 160 W |
| Thermal resistance junction‑case (TO‑220) | 0.78 °C/W |
| Avalanche current | 4 A |
| Single pulse avalanche energy | 350 J |
The maximum drain‑source voltage is 1500 V.
The devices can conduct up to 4 A continuous drain current at 25 °C.
The total dissipation rating is 160 W at 25 °C.