This document describes the features and characteristics of the STD2N50 N-channel enhancement mode power MOS transistor, including typical on-resistance, voltage rating, current rating, and avalanche test data. The product is suitable for high current, high-speed switching, switch mode power supplies (SMPS), chopper regulators, converters, motor control, and lighting applications for industrial and consumer environments.
The STD2N50 is a 500 V, 2 A N‑channel enhancement‑mode power MOSFET designed for high‑current, high‑speed switching applications such as SMPS, chopper regulators and motor control. It is offered in through‑hole TO‑251 (TQ‑251) and surface‑mount TO‑252 (TQ‑252) packages.
The document provides absolute maximum ratings, thermal data, avalanche characteristics, electrical parameters, switching performance, and mechanical dimensions. It also includes derating curves and safe‑operating‑area graphs for design reference.
| Drain‑source Voltage (VDS) | 500 V |
|---|---|
| Gate‑source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) @ 100 °C | 1.25 A |
| Pulsed Drain Current (ID,pulse) | 8 A |
| Avalanche Current (IAvalanche) | 2 A |
The STD2N50 can withstand up to 500 V between drain and source.