This datasheet introduces the TOSHIBA TLP197GA product information, including model, package, trigger LED current, peak off-state voltage, on-state current, on-state resistance, isolation voltage, etc.
The Toshiba TLP197GA is a GaAs infrared emitting diode optically coupled to a photo‑MOSFET in a 6‑pin SOP package. It is intended as a surface‑mount replacement for mechanical relays in compact electronic equipment.
The document lists absolute maximum ratings, recommended operating conditions, detailed electrical characteristics, and safety restrictions. It also includes pin configuration, circuit connection diagrams, and switching performance graphs to aid designers in proper integration.
| Peak off‑state voltage | 400 V (min) |
|---|---|
| Trigger LED current | 3 mA (max) |
| Isolation voltage | 1500 Vrms (min) |
| Weight | 0.13 g (typ.) |
| Supply voltage (Vpp) | 320 V (max) |
| Forward voltage (IF=10 mA) | 1.0‑1.3 V (typ. 1.15 V) |
| Input‑to‑output capacitance | 0.8 pF (typ.) |
| Off‑state current | 1 pA (max) |
The device is rated for a minimum peak off‑state voltage of 400 V.
Recommended operating temperature is –20 °C to 65 °C.
The photocoupler provides at least 1500 Vrms isolation voltage.
It is supplied in a 6‑pin SOP package (2.54 mm pitch, 2.1 mm high).