TLP199D is a photocoupler that consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measurement instruments.
The TLP199D is a gallium‑arsenide infrared emitting diode optically coupled to a photo‑MOSFET in a plastic SOP package. It offers low off‑state current and low output capacitance, making it suitable for high‑frequency measurement instruments.
The document lists absolute maximum ratings, recommended operating conditions, pin configuration, and detailed electrical characteristics such as forward voltage, isolation voltage, and switching times, along with usage restrictions and safety notes for designers.
| Peak Off‑State Voltage | 200 V (min) |
|---|---|
| Trigger LED Current | 3 mA (max) |
| On‑State Current | 50 mA (max) |
| On‑State Resistance | 50 Ω (max) |
| Output Capacitance | 20 pF (max) |
| Isolation Voltage | 1500 Vrms (min) |
| Forward Voltage (typical) | 1.15 V |
| Reverse Voltage | 5 V |
| Storage Temperature Range | -55 °C to 125 °C |
| Operating Temperature Range | -40 °C to 85 °C |
The maximum forward (on‑state) current is 50 mA.
It is rated for a minimum isolation voltage of 1500 Vrms.
The recommended supply voltage can be up to 160 V.
Typical operating temperature is from –20 °C to 60 °C.