The Toshiba TLP200D is a GaAs infrared emitting diode optically coupled to a photo‑MOS FET in an 8‑pin SOP package. It is a 2‑Form‑A switch intended to replace mechanical relays where space savings are required.
The document provides maximum ratings, electrical characteristics, isolation and switching parameters, recommended operating conditions, and usage restrictions for general electronics applications.
| Peak Off‑State Voltage | 200 V (MIN) |
|---|---|
| Trigger LED Current | 3 mA (MAX) |
| On‑State Current | 200 mA (MAX) |
| On‑State Resistance | < 80 Ω (MAX) |
| Isolation Voltage | 1500 V (MIN) |
| Forward Current (I_F) | 50 mA |
| Reverse Voltage (V_R) | 5 V |
| Junction Temperature (T_j) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Supply Voltage (V_PP_D) | 150‑200 V |
The isolation voltage is specified as a minimum of 1500 V.
The maximum forward current (I_F) is rated at 50 mA.
The on‑state resistance is less than 80 Ω (maximum).