The Toshiba TLP200D is a GaAs infrared emitting diode optically coupled to a photo‑MOS FET in an 8‑pin SOP package. It is a 2‑Form‑A switch intended to replace mechanical relays where space savings are required.
The document provides maximum ratings, recommended operating conditions, electrical characteristics, isolation data, switching performance, and usage restrictions for the device.
| Peak Off‑State Voltage | 200 V (MIN.) |
|---|---|
| On‑State Current | 200 mA (MAX.) |
| Isolation Voltage | 1500 V (MIN.) |
| Forward Current (Ip) | 50 mA |
| Reverse Voltage (VR) | 5 V |
| Junction Temperature (Tj) | 125 °C |
| Operating Temperature Range | -40 °C to 85 °C |
| Weight | 0.2 g |
The device has a minimum isolation voltage of 1500 V.
A supply voltage between 150 V and 200 V is recommended.
The TLP200D can operate from –40 °C up to 85 °C.
Typical forward current values are 5 mA to 25 mA.