The TC7SLOOF/FU is a low‑voltage CMOS 2‑input NAND gate fabricated with silicon‑gate C2MOS technology. It offers low power dissipation, symmetrical output impedance, and built‑in protection against static discharge and transient over‑voltage.
The datasheet provides detailed recommended operating conditions, DC and AC electrical characteristics, maximum ratings, pin‑out diagram, and mechanical outline dimensions for the SSOP5‑P packages.
| Supply Voltage Range (VCC) | 1 ~ 3.6 V |
|---|---|
| Typical Propagation Delay (tPLH/tPHL) | 10 ns (typ.) at VCC = 3 V |
| Maximum Output Current (I_O) | 1 A (max) at 25 °C |
| Power Dissipation (P_D) | 200 mW |
| Storage Temperature Range | -65 °C ~ 150 °C |
| Lead Temperature (10 s) | 260 °C |
| Package Weight (SSOP5‑P‑0.95) | 0.016 g (typ.) |
| Package Weight (SSOP5‑P‑0.65) | 0.006 g (typ.) |
The device operates from 1 V to 3.6 V supply voltage.
Typical propagation delay is about 10 ns at a 3 V supply.
It can source up to 1 A of output current at 25 °C.
The IC is rated for a maximum power dissipation of 200 mW.