The TLP541G and TLP542G are photo‑thyristor devices optically coupled to a gallium‑arsenide infrared emitting diode, offered in six‑lead (TLP541G) and seven‑lead (TLP542G) DIP packages. The datasheet provides maximum ratings, recommended operating conditions, and individual electrical characteristics for each device.
Key specifications include peak off‑state voltage, isolation voltage, forward and on‑state currents, supply voltage limits, and temperature ranges. The document also outlines handling precautions, intended application areas, and restrictions on use in safety‑critical or high‑reliability equipment.
| Peak off‑state voltage | 400 V (min) |
|---|---|
| Isolation voltage | 2500 V rms (min) |
| Forward current (IF) | 70 mA (max) |
| On‑state current (RMS) | 150 mA (max) |
| Supply voltage | 120 Vac (max) |
| Storage temperature range | -55 °C to 125 °C |
| Trigger LED current | 7 mA (max) |
| Gate‑to‑cathode resistance | 27 kΩ (typ) |
The peak off‑state voltage is specified as 400 V minimum.
The isolation voltage rating is 2500 V rms minimum.
The maximum forward current (IF) is 70 mA.