TLP627A, TLP627A-2, and TLP627A-4 consist of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor. They have a 350V high voltage of collector-emitter breakdown voltage. TLP627A-2 offers two isolated channels in an eight lead plastic DIP package, while TLP627A-4 provides four isolated channels per package.
The Toshiba TLP627A series are GaAs infrared emitting‑diode optocouplers with a Darlington‑connected phototransistor. The family includes the single‑channel TLP627A, the dual‑channel TLP627A‑2, and the four‑channel TLP627A‑4, all offered in an eight‑lead plastic DIP package.
The document provides absolute maximum ratings, recommended operating conditions, and detailed electrical characteristics such as collector‑emitter voltage, current transfer ratio, isolation voltage, and switching times. It also lists handling precautions and restrictions on product use for safety‑critical applications.
| Collector‑Emitter Voltage (VCEO) | 350 V (min) |
|---|---|
| Current Transfer Ratio (CTR) | 1500 % (min) |
| Isolation Voltage | 5000 Vrms (min) |
| Weight (TLP627A) | 0.26 g |
| Weight (TLP627A‑2) | 0.54 g |
| Weight (TLP627A‑4) | 1.1 g |
The collector‑emitter breakdown voltage is specified as 350 V minimum.
The devices are rated for at least 5000 Vrms isolation voltage.
The minimum CTR is 1500 %.