This document introduces the features and characteristics of the TLP628, TLP628−2, and TLP628−4. They are photocouplers consisting of a gallium arsenide infrared emitting diode and a phototransistor. These products have a collector-emitter breakdown voltage of up to 350V and a current transfer ratio of over 50%. The TLP628−2 has two isolated channels, while the TLP628−4 has four isolated channels. The packages of these products are eight-lead plastic DIP package and multi-lead package respectively.
The TLP628 series consists of a gallium‑arsenide infrared emitting diode optically coupled to a phototransistor, offering high isolation (5000 Vrms) and a collector‑emitter breakdown voltage of 350 V. Variants TLP628‑2 and TLP628‑4 provide two and four isolated channels respectively in a DIP package.
The document lists absolute maximum ratings, recommended operating conditions, individual and coupled electrical characteristics, switching performance, and restrictions on product use. It also includes temperature ranges, lead‑soldering limits, and guidance for reliable design implementation.
| Collector‑emitter breakdown voltage | 350 V (min.) |
|---|---|
| Current transfer ratio (CTR) | 50 % (min.) |
| Isolation voltage | 5000 Vrms (min.) |
| Forward voltage (typical) | 1.15 V |
| Reverse voltage | 5 V |
| Storage temperature range | -55 °C to 125 °C |
| Operating temperature range | -55 °C to 100 °C |
| Lead soldering temperature | 260 °C (10 s) |
The isolation voltage is specified as 5000 Vrms minimum.
The recommended supply voltage can go up to 200 V.
The collector‑emitter breakdown voltage is rated at a minimum of 350 V.
The devices are rated for operating temperatures from –25 °C to 85 °C (typical).