This specification sheet introduces the characteristics and parameters of the TIP125 PNP Darlington transistor.
The TIP125 is a PNP Darlington transistor intended for general‑purpose amplifier and low‑speed switching applications. It is supplied in a TO‑220AB package with pins for base, collector and emitter.
Key electrical ratings include a collector‑base voltage of -60 V, collector‑emitter voltage of -60 V, continuous collector current of 5 A, and a total power dissipation of 2 W at 25 °C. The device can operate from -55 °C to +150 °C storage temperature and up to +150 °C junction temperature.
| Collector‑Base Voltage (VcBo) | -60 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | -60 V |
| Collector Current (Ic) | 5 A |
| Total Power Dissipation (Pb) | 2 W |
| Junction Temperature (Tj) | +150 °C |
| Storage Temperature (TSTG) | -55 °C to +150 °C |
| Base‑Emitter On Voltage (VBE(on)) | 2.5 V |
The TIP125 can handle a continuous collector current of 5 A.
The device can dissipate up to 2 W of power at a case temperature of 25 °C.
It can be stored from -55 °C up to +150 °C.