This datasheet describes the features and characteristics of the AT25320B/640B device. The device is a serial electrically-erasable programmable read-only memory (EEPROM) with a capacity of 32768/65536 bits and an organization of 4096/8192 8-bit words. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.
The AT25320B is a 32‑Kbit serial electrically‑erasable programmable read‑only memory (EEPROM) optimized for low‑power and low‑voltage applications. It is accessed via a three‑wire SPI interface (CS, SI, SO, SCK) and supports both 1.8 V and 5.5 V operation.
The device is offered in several 8‑lead packages (PDIP, SOIC, TSSOP, Ultra Thin Mini‑MAP, Ultra Lead Frame Land Grid Array) and provides features such as block write protection, a self‑timed write cycle (max 5 ms), 1 M write‑cycle endurance, and 100‑year data retention.
| Supply Voltage | 1.8 V to 5.5 V |
|---|---|
| Operating Temperature | -40 °C to +85 °C |
| Maximum Clock Rate | 20 MHz (5 V) |
| Page Mode Size | 32 bytes |
| Endurance | 1 M write cycles |
| Data Retention | 100 years |
| Write Cycle Time | 5 ms max |
The device supports a maximum SPI clock rate of 20 MHz when powered at 5 V.
The EEPROM is rated for one million write cycles.
The AT25320B operates from –40 °C to +85 °C.