The AT28C010 is a high-performance EEPROM with 1 megabyte of storage space organized as 131,072 8-bit words. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically complete the page write operation.
The AT28C010 is a 1‑megabit (128 K × 8) electrically‑erasable programmable read‑only memory that operates like a static RAM for read and write cycles. It provides fast 120 ns read access, a maximum 10 ms page‑write cycle, low standby current (200 pA) and a single 5 V ± 10 % supply.
The datasheet details pin configurations for PDIP, TSOP and PLCC packages, electrical characteristics, operating modes, and both hardware and software protection mechanisms that guard against inadvertent writes. Package dimensions and absolute maximum ratings are also included.
| Memory size | 1 megabit (128 K × 8) |
|---|---|
| Read access time | 120 ns |
| Maximum page‑write cycle time | 10 ms |
| Supply voltage | 5 V ± 10 % |
| Active current | 40 mA |
| Standby current (CMOS) | 200 pA |
| Operating temperature (case) | -40 °C to +85 °C |
| Input low voltage | 0.8 V |
| Input high voltage | 2.0 V |
| Maximum write bytes per page | 128 bytes |
The device provides a fast read access time of 120 ns.
Up to 128 bytes can be written in one page‑write cycle.