BLF368 is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability, and excellent reliability. The transistor is packaged in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
The Philips BLF368 is a dual push‑pull silicon N‑channel MOS transistor designed for VHF broadcast transmitter applications. It is supplied in a 4‑lead SOT262A1 balanced flange package with two ceramic caps and provides high power gain, easy power control and good thermal stability.
The document provides detailed electrical characteristics, limiting values, thermal data, pin configuration, and application notes for class‑AB operation, along with safety warnings for handling the beryllium‑oxide material and contact information for Philips Semiconductors.
| Drain‑source voltage (Vds) | 65 V |
|---|---|
| Gate‑source voltage (Vgs) | +20 V |
| Maximum drain current (Id) | 25 A |
| Storage temperature range | -65 °C to +150 °C |
| Maximum junction temperature (Tj) | 200 °C |
The device contains beryllium oxide and must not be damaged; it should be handled with anti‑static packaging and disposed as chemical or special waste according to local regulations.
The maximum continuous drain current is 25 A.
The transistor can be stored from –65 °C up to +150 °C.