BLF278 is a power MOS transistor from Philips. The device has high power gain, easy power control, good thermal stability and is used in broadcast transmitters.
This datasheet describes the BLF278 VHF push‑pull power MOS transistor manufactured by Philips Semiconductors. It includes electrical characteristics, thermal data, and recommended application circuits for broadcast transmitters in the VHF band.
Key specifications include a 125 V drain‑source voltage rating, 18 A continuous drain current, up to 500 W total power dissipation, and thermal resistances of 0.35 K/W (junction‑to‑case) and 0.15 K/W (case‑to‑ambient). The device contains beryllium oxide and must be handled with anti‑static precautions and disposed as hazardous waste.
| Drain‑source voltage (VDS) max | 125 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) max | 18 A |
| Storage temperature range | -65 °C to 150 °C |
| Maximum junction temperature (Tj) | 200 °C |
The BLF278 is rated for a maximum drain‑source voltage of 125 V.
The device can handle up to 18 A of continuous drain current.
The product contains beryllium oxide and must not be damaged; it should be handled with anti‑static packaging and disposed as chemical or special waste.
Storage temperature is –65 °C to 150 °C, and the junction temperature must not exceed 200 °C.