SSM5H01TU is a Toshiba Nch MOSFET and Schottky diode composite device with low RDS(ON) and low VF, suitable for DC-DC converter.
The SSM5H01TU integrates an N‑channel MOSFET and a Schottky barrier diode in a single package, offering low on‑resistance and low forward voltage for low‑loss DC‑DC conversion applications. The document provides product overview, maximum ratings, and safety precautions for reliable use.
Electrical specifications are listed for both the MOSFET and the Schottky diode, including voltage limits, capacitances, and characteristic curves. Handling notes stress static‑discharge protection and proper thermal design, while the safety section warns against use in high‑risk applications such as nuclear, aerospace or medical equipment. This manual is written in Japanese.
| Drain‑Source Voltage (VDS) max | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) max | 20 V |
| Reverse Voltage (VR) of Schottky diode | 20 V |
| Forward Voltage (VF) at IF=0.5 A | 0.43 V |
| Input capacitance (Ciss) | 106 pF |
| Output capacitance (Coss) | 28 pF |
The MOSFET can tolerate up to 30 V between drain and source.
The gate‑source voltage is limited to 20 V.
At a forward current of 0.5 A the diode’s forward voltage is 0.43 V; at 0.3 A it is about 0.38 V.
The device is sensitive to static electricity and must be handled with ESD protection; adequate heat dissipation must be considered based on board material and layout.