This document describes the features and characteristics of the HN4C06J transistor produced by Toshiba. This transistor is suitable for low-frequency amplification and low-noise applications, and it has high voltage resistance, high current amplification ratio, good linearity, and low noise.
The document describes the HN4C06J NPN epitaxial transistor, highlighting its high current gain (hFE 200‑700), low noise (NF 1 dB), and high voltage capability (VcEo 120 V). It includes package information, typical performance curves, and reliability guidelines for low‑frequency amplification applications.
Detailed tables list absolute maximum ratings, electrical parameters such as collector‑base voltage, collector‑emitter voltage, and power dissipation, as well as recommended operating conditions and handling precautions. The final section provides legal and safety notices for proper use of the semiconductor device. This manual is written in Japanese.
| Collector‑Base Voltage (VcBo) | 120 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | 120 V |
| Emitter‑Base Voltage (VEB0) | 5 V |
| Power Dissipation (Pc) | 300 mW |
| Current Gain (hFE) | 200‑700 |
| Mass | 0.014 g |
The maximum collector‑emitter voltage is 120 V.
The device can dissipate up to 300 mW.
The current gain ranges from 200 to 700.