2SC5089 is a low-noise NPN transistor from Toshiba. It features excellent noise characteristics, high insertion power gain, and can be used for low-noise amplification in the VHF~UHF frequency range.
The 2SC5089 is a silicon NPN epitaxial planar transistor intended for VHF/UHF low‑noise amplification. The document lists absolute maximum ratings, typical electrical parameters, and recommended usage conditions.
Detailed sections cover electrical characteristics, microwave performance, S‑parameter data, and product handling instructions, including temperature limits and reliability considerations. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 20 V |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 10 V |
| Emitter‑Base Voltage (VEB) | 1.5 V |
| Maximum Collector Current (Ic) | 40 mA |
| Power Dissipation (Pc) | 150 mW |
| Maximum Junction Temperature (Tj) | 125 °C |
The maximum collector‑base voltage is 20 V.
The device may be operated from –55 °C up to 125 °C.
The typical noise figure at 1 GHz is about 1.1 dB.