MT6L58AE is a silicon NPN transistor from Toshiba. It is mainly used for low noise amplification in the VHF~UHF band. The product uses an ultra-small and thin ES6 package and contains 2 transistors. It has the characteristics of low voltage operation and low phase noise.
The MT6L58AE is a silicon NPN epitaxial planar transistor offered in a compact ES6 surface‑mount package. It is intended for VHF/UHF low‑noise amplification and low‑voltage operation, featuring three pins for collector, base, and emitter connections.
The document lists key specifications such as collector‑base voltage, collector‑emitter voltage, current ratings, gain, and storage temperature range, and includes important handling precautions to protect the device from static discharge and excessive stress during high‑load operation. This manual is written in Japanese.
| Collector‑Base Voltage (VcBo) | 10 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | 5 V |
| Emitter‑Base Voltage (Vebo) | 15 V |
| Maximum Collector Current (IcBo) | 15 mA |
| Maximum Emitter Current (Iebo) | 7 mA |
| Power Dissipation (Pc) | 100 mW |
| Storage Temperature Range | -55 °C to 125 °C |
The maximum collector‑base voltage is 10 V.
It can be stored from –55 °C up to 125 °C.
The device is sensitive to static electricity, so anti‑static measures must be used, and high‑load or high‑temperature operation should be avoided to maintain reliability.