2SD2206 is a silicon NPN transistor produced by Toshiba. It is mainly used in micromotor drives, handheld power tools and other fields. This device has the characteristics of high DC current gain and low saturation voltage.
The 2SD2206 is a silicon NPN epitaxial transistor (Darlington connection) intended for micro‑motor drive and switching applications. It offers high current gain and low saturation voltage, making it suitable for power amplification tasks.
The datasheet provides detailed electrical specifications, absolute maximum ratings, and recommended operating conditions, along with reliability guidance and RoHS compliance information. This manual is written in Japanese.
| Collector‑Base voltage (VcBO) | 100 V |
|---|---|
| Collector‑Emitter voltage (VcEO) | 100 V |
| Emitter‑Base voltage (VEB) | 8 V |
| Collector current (Ic) | 0.5 A |
| Power dissipation (Pc) | 900 mW |
| Operating temperature range | -55 °C to 150 °C |
| Mass | 0.36 g |
| Current gain (hFE) minimum | 2000 |
The maximum collector‑emitter voltage is 100 V.
It is rated for operation from –55 °C up to 150 °C.
Yes, the device complies with RoHS; contact Toshiba sales for details.
The datasheet lists a collector current of 0.5 A.