International Rectifier Manuals

IRF1310S HEXFET® Power MOSFET PD is a high-performance power MOSFET manufactured by the fourth generation International Rectifier (IR) HEXFET technology

IRF1310NS/L HEXFET® is an extremely efficient and reliable power device from International Rectifier company, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1310NL) is available for low- profile applications.

This document describes an automotive MOSFET product with low on-resistance and fast switching speed, suitable for automotive and other applications. The product has a 175°C operating temperature and improved repetitive avalanche rating.

This document describes a HEXFET® power MOSFET specifically designed for automotive applications, featuring extremely low on-resistance, high temperature operation, and suitability for a wide range of applications.

The JANTXV2N6756 is a power MOSFET from International Rectifier. Its maximum continuous current is 14A, its maximum peak current is 56A, its maximum voltage is 20V, and its maximum power dissipation is 75W.

The IRF1205 HEXFET® Power MOSFET features low on-resistance, fast switching speed, and rugged design. Suitable for a wide range of applications.

IRF1010N HEXFET® Power MOSFET is a high performance 55 V low RDS(on) MOSFET from International Rectifier with extremely low on-resistance, fast switching speed and ruggedized device design for use in a wide range of applications.

IRF1010E HEXFET® Power MOSFET is a high performance power MOSFET device from International Rectifier, which features extremely low on-resistance, high switching speed and ruggedized design.

The document introduces a HEXFET transistor called IRF054, which utilizes International Rectifier's advanced technology. The transistor features low on-state resistance, high transconductance, reverse energy, and diode recovery speed. It is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high-energy pulse circuits.

IRF034 is a N-channel MOSFET produced by International Rectifier. Its features are low on-state resistance, high transconductance, superior reverse energy and diode recovery dv/dt capability.

This PDF document describes the features and characteristics of the IRK.41 and IRK.56 series ADD-A-pakTM GEN V Power Modules, including high voltage industrial standard package, copper baseplate, easy mounting, and high surge capability.

The IRK.56, .71 series is a standard high voltage industrial module with high voltage, high surge capability, and easy installation.