International Rectifier Manuals

The IRK.41,.56 series is IRF's high voltage industrial standard module with thick Al metal die and double stick bonding. It combines excellent thermal performance with superior mechanical ruggedness. The module has a maximum rated voltage of 1600V and a maximum surge current of 85.0KA2√s.

IRL1104S/L HEXFET® Power MOSFET is a high performance MOSFET device that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This device offers the designer an extremely efficient and reliable device for use in a wide variety of applications.

IRG4CC40UB is a 600V IGBT with a 6-inch wafer package and a rated power of 10A.

The ATW28XXD series is a high-reliability, high-density, and high-power DC/DC converter developed by IRF. It uses advanced analog hybrid technology and has an input range of 18 to 40 VDC, ±12V and ±15V output voltages, and can provide 30W output power. It has a fast loop response and excellent transient characteristics, and an operating temperature range of -55°C to +125°C. It also offers full military screening and an average failure-free time of 200,000 hours.

This document describes the features and characteristics of the 90-110MT..KB series three-phase bridge rectifiers, including high thermal conductivity package, electrically insulated case, excellent power volume ratio, and easy connections to power transistor and IGBT modules.

This document describes the features and characteristics of the 301U(R) Series Standard Recovery Diodes, including wide current range, high voltage ratings, and high surge current capabilities. The product is suitable for converters, power supplies, machine tool controls, high power drives, and medium traction applications.

This document describes the features and characteristics of the IRK.41 and IRK.56 series ADD-A-pakTM GEN V power modules, including high voltage industrial standard package, thick Al metal die and double stick bonding, thick copper baseplate, UL E78996 approved, 3500VRMS isolating voltage, etc.

This document is about the absolute maximum ratings of irf3205pbf. It has extremely low on-resistance and dynamic dv/dt rating. It can operate at 175°C junction temperature and has fast switching speed and improved repetitive avalanche rating. It is an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

SD253N/R Series 1 is a fast recovery diode produced by IRF company with high power and high voltage features.

IRK.F112.. series INT-A-pak modules have the features of fast-turn-off thyristor, fast-recovery diode, high surge capability, electrically isolated baseplate, 3000 VRMS isolating voltage, industrial standard package and UL E78996 approval. They are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.

This document describes the features and characteristics of a series of high voltage power modules, including high voltage electrically isolated base plate, industrial standard package, simplified mechanical designs, high surge capability, etc. These modules can be used for general purpose applications such as battery chargers, welders, plating equipment, motor drives, UPS, etc.

International Rectifier's R5TM technology provides high-performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling, and temperature stability.

This document introduces International Rectifier's (IR) RAD-HardTM HEXFET® MOSFET technology, which provides high-performance power MOSFETs for space applications. These devices have low Rdson and low gate charge, reducing power losses in switching applications. Additionally, they retain all the advantages of MOSFETs, such as voltage control, fast switching, ease of paralleling, and temperature stability of electrical parameters.