International Rectifier Manuals

This document describes the features and characteristics of the ST330C..C series phase control thyristor products, including metal case, ceramic insulator, international standard packaging, etc. It is suitable for applications such as DC motor controls, controlled DC power supplies, AC controllers, etc.

This datasheet provides the specifications of IRF330 400V N-channel MOSFET.

This data sheet provides the absolute maximum ratings, product summary, brand, model and other information of IRHNA9260.

The IRF640S/L HEXFET® Power MOSFET is a low-on-resistance, fast-switching, high-voltage, high-temperature third-generation HEXFET® device that can be operated in a dynamic dv/dt rating at 150°C. The device is packaged in the D2Pak, which provides the highest power capability and lowest possible on-resistance of any existing surface mount package.

The 10ETF.. fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.

This datasheet lists the specifications of IRFF210, including rated voltage, rated current, maximum power dissipation, operating temperature range etc.

The 8AF1NLH is a motor produced by Siemens of Germany, and is used in wind farms.

This document describes the features and applications of the HFA04SD60S ultrafast soft recovery diode. The diode has ultrafast recovery time, ultrasoft recovery, very low IRRM, very low Qrr, and guaranteed avalanche characteristics. It is optimized to reduce losses and EMI/RFI in high-frequency power conditioning systems. It is ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements.

IRF9230 is a high voltage power MOSFET transistor produced by International Rectifier company. It has very low on-state resistance, high transconductance, superior reverse energy and diode recovery dv/dt capability.

IRU1010-25 is a 1A low dropout positive fixed 2.5V regulator. This product is specifically designed to provide well regulated supply for low voltage IC applications as well as generating clock supply for PC applications. The IRU1010-25 is guaranteed to have <1.3V dropout at full load current making it ideal to provide well regulated with 3.8V input supply. The IRU1010-25 is specifically de- signed to be stable with low cost aluminum capacitors while maintaining stability with low ESR tantalum caps.

This document introduces the features and characteristics of Huawei MateBook14s.

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

This datasheet provides the data information of IR2153(S) half-bridge gate driver, including product features, typical connections, package dimensions, etc.

IR2122(S) is a high voltage, high-speed power MOSFET and IGBT driver with a floating channel design for bootstrap operation. It is fully operational up to +600V, tolerant to negative transient voltage, and immune to dV/dt. It has a gate drive supply range from 10 to 20V, undervoltage lockout, and compatibility with 3.3V, 5V, and 15V input logic. It also features an FAULT lead to indicate shutdown and an output out of phase with input.

The 163CMQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.