CEL Manuals

This datasheet provides the specifications of NEC's NE681 series of NPN transistors. This series of transistors has high gain bandwidth product, low noise figure and high associated gain, suitable for low noise, high gain, low cost amplifier applications.

NEC's NE680 series is an NPN epitaxial silicon transistor designed for low noise, high gain, and low-cost applications. Suitable for applications up to 6 GHz. Both the chip and micro-x versions of NE680 are suitable for applications up to 6 GHz. The NE680 die is also available in six different low-cost plastic surface mount package styles. The high fT of NE680 makes it ideal for low voltage/low current applications, as low as 0.5 V / 0.5 mA. The maximum IC for the NE680 series is 35 mA. For higher current applications, see the NE681 series.

NE674 is a L to Ku band low noise GaAs MESFET from NEC, featuring a low noise figure with high associated gain employing a recessed 0.3 micron gate and triple epitaxial technology. This device is suitable for both amplifier and oscillator applications. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications.

The NEC NE677M04 is a high frequency NPN transistor with high gain bandwidth, high output power and high linear gain. The product is manufactured using NEC's HFT3 wafer process and is packaged in an M04 package with a SOT-343 footprint and a height of only 0.59mm.

NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power at 3.5V and 3 watts of output power at 5V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.

NE650103M is a 10 W GaAs MESFET designed by NEC for PCS, W-CDMA, WLL transmitter applications. It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity.

The NE552R479A is NEC's N-channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications.

The document describes an N-channel silicon power MOSFET called NE5520379A, which is designed as the transmission power amplifier for 3.2V GSM900 handsets. It features high output power, high linear gain, and high power added efficiency.

NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2V GSM900 handsets. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.

NE5520279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. It can be operated at up to 6 V for higher power, Fixed Wireless Access applications.

NE5520279A is a low cost, high performance, high reliability LD-MOSFET from NEC, suitable for 0.7-2.5GHz fixed wireless, mobile wireless and other applications.

The NE5511279A is an N-channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage.

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.

The NE5510179A is a 3.5V GSM1800 and GSM 1900 handset transmission driver amplifier from NEC. The device is manufactured using NEC's NEWMOS technology (NEC's 0.6µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5dBm output power with 50% power added efficiency at 1.9GHz under the 3.5V supply voltage, or can deliver 29dBm output power at 3.5V supply voltage.