Key facts
- Model
- IRF1407
- Category
- Power Management
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-04
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International Rectifier IRF1407S/IRF1407L MOSFET Handbook
The handbook provides an overview of the IRF1407S (surface‑mount) and IRF1407L (through‑hole) HEXFET® power MOSFETs, highlighting their ultra‑low on‑resistance, high current capability and fast switching performance. It includes detailed absolute maximum ratings, electrical characteristics, and thermal data for designers.
Additional sections cover package dimensions, tape‑and‑reel handling, switching‑time test circuits, and avalanche rating guidelines, offering practical information for implementing these devices in a wide range of power‑electronics applications.
International Rectifier IRF1407 specifications
| On‑Resistance (RDS(on)) | 0.0078 Ω |
|---|---|
| Gate Threshold Voltage (VGS(th)) | 2.0 V – 4.0 V |
| Power Dissipation | 330 W |
| Single Pulse Avalanche Energy | 390 mJ |
All International Rectifier IRF1407 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum power dissipation at 25 °C?
The device can dissipate up to 3.8 W at a case temperature of 25 °C.
From: International Rectifier IRF1407S/IRF1407L MOSFET Handbook
What is the on‑resistance of the IRF1407?
The typical static drain‑to‑source on‑resistance is 0.0078 Ω when VGS = 10 V and ID = 78 A.