Samsung datasheet that details specifications, pin configurations, electrical characteristics and dimensions for unbuffered DDR2 SDRAM SODIMM modules.
This datasheet describes Samsung's unbuffered DDR2 SDRAM SODIMM family, covering part numbers M470T6464FBS, M470T2863FB3, M470T2864FB3 and M470T5663FB3. It provides ordering information, key features, pin layouts, functional block diagrams and electrical ratings.
The document is organized into sections such as Ordering Information, Key Features, Pin Configurations, Functional Block Diagram, Electrical Characteristics, Physical Dimensions and Operating Conditions, allowing designers to quickly locate the data needed for system integration.
| Core voltage (VDD) | 1.8 V ± 0.1 V |
|---|---|
| Package type | 60‑ball FBGA – 128Mx8 (also 84‑ball FBGA – 64Mx16) |
| Maximum data rate (CL5) | 800 Mbps |
| Module length | 67.60 ± 0.15 mm |
The core and I/O supply voltage is 1.8 V ± 0.1 V.
Modules use a 60‑ball FBGA package for the 128Mx8 configuration and an 84‑ball FBGA package for the 64Mx16 configuration.
The modules support up to 800 Mbps at CL5.