This datasheet provides technical specifications, maximum ratings, and electrical characteristics for the Infineon IPD25N06S4L-30 N-channel enhancement mode…
The document details the features of the IPD25N06S4L-30 OptiMOS-T2 Power Transistor, an N-channel enhancement mode device qualified under AEC Q101. Key specifications include a maximum drain-source breakdown voltage of 60 V and a continuous drain current of up to 25 A at 25°C.
The datasheet covers static characteristics such as gate threshold voltage and on-state resistance, dynamic parameters like input capacitance and gate charge, and thermal data including junction-to-case thermal resistance. It also presents graphical representations of the safe operating area, output characteristics, and avalanche energy versus temperature.
| Continuous drain current (TC=25°C) | 25 A |
|---|---|
| Pulsed drain current (TC=25°C) | 92 A |
| Drain-source breakdown voltage | 60 V |
| Power dissipation (TC=25°C) | 29 W |
| Operating temperature range | -55 ... +175 °C |
| Thermal resistance junction-case (RthJC) | 5.1 K/W |
Yes, it is AEC Q101 qualified.
The device can operate up to 175°C.