The Filtronic LP7512 is a solid‑state ultra‑low‑noise PHEMT with detailed performance specifications and handling guidelines.
The LP7512 is an AlGaAs/InGaAs pseudomorphic high‑electron‑mobility transistor designed for ultra‑low noise and usable gain up to 40 GHz. It is offered in a 70 mil ceramic package (P70) and a low‑cost SOT‑23 plastic package, targeting low‑noise receiver pre‑amplifiers for commercial and military applications.
The datasheet provides key electrical parameters, absolute maximum ratings, recommended operating limits, handling precautions, and assembly instructions, enabling designers to integrate the device safely and reliably into RF front‑ends.
| Typical Noise Figure (NF) at 12 GHz | 0.6 dB |
|---|---|
| Typical Associated Gain at 12 GHz | 12.0 dB |
| Die size | 18 × 13 mil (460 × 330 µm) |
| Maximum Drain‑Source Voltage (VDS) | 4 V |
| Maximum Gate‑Source Voltage (VGS) | -2 V |
| Maximum Power Dissipation (PT) | 460 mW |
The LP7512 has a typical noise figure of 0.6 dB at 12 GHz.
The chips should be stored in a dry nitrogen environment and handled with proper ESD precautions throughout storage, handling, assembly, and testing.
Gold/tin eutectic solder under a nitrogen atmosphere is the recommended die‑attach method.