Filtronic Manuals

Filtronic 2-26 GHz PHEMT Amplifier Solid State LMA208C is a medium power PHEMT amplifier that operates from 2 to 26GHz. It provides 9dB typical gain, 18dBm 1-dB gain compression power and 15dB input/output return loss.

The document describes the specifications and features of single channel coaxial rotary joints, including TNC and TYPE-N connectors, high-speed operation design, MIL-E-5400 Class II standard, long life, etc.

Filtronic LP6836P100 is a solid-state packaged 0.25W power PHEMT product with features such as high power, low distortion, and high efficiency. It is suitable for commercial and military high-performance power amplifiers, including SATCOM uplink transmitters and medium-haul digital radio transmitters.

FMA411 is a low-noise MMIC amplifier from Filcs. It works in the 8.5-14.0GHz band, has a noise figure of 2.6dB, a small-signal gain of 18dB, an output power of 17.5dBm, and a single supply voltage of +6V. It can also be adjusted to work with different currents.

LP3000/LPV3000 Solid State 2W Power PHEMT Phone: (408) 988-1845 Internet: http://www.filtronicsolidstate.com Fax: (408) 970-9950 FEATURES • +33.5 dBm Typical Power at 18 GHz • 7 dB Typical Power Gain at 18 GHz • +30.5 dBm at 3.3V Battery Voltage • Low Intermodulation Distortion • 45% Power-Added-Efficiency at 18 GHz DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE THICKNESS: 2.6 mils (65 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.) DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package. Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned

The LP3000P100 is a high-power pHEMT device from Filss. It has an output power of 33 dBm, a power gain of 8 dB, and a power-added efficiency of 60%. It is designed for medium-power, linear amplification applications.

The LP3000SOT89 is a packaged aluminum gallium arsenide / indium gallium arsenide (AlGaAs / InGaAs) pseudomorphic high electron mobility transistor (pHEMT). It utilizes a 0.25µm x 3000µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications.

The Filtronic MAX002 modulator driver amplifiers are designed for optical communication systems and provide a flat output power from 30kHz to greater than 15 GHz. They are ideally suited for driving Lithium Niobate Mach-Zender modulators. The amplifier features a miniature size, high output power, ultra broadband capability, flat gain characteristic, MMIC technology, monitor output, and gain and offset control.