Filtronic LP3000SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT handbook

Update: 30 September, 2023

The LP3000SOT89 is a packaged aluminum gallium arsenide / indium gallium arsenide (AlGaAs / InGaAs) pseudomorphic high electron mobility transistor (pHEMT). It utilizes a 0.25µm x 3000µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications.

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File format: PDF

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MD5 Checksum: BB548159D80EACB78DEF5B799C63E258

Publication date: 03 July, 2012

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PDF Link: Filtronic LP3000SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT handbook PDF