The LP3000SOT89 is a packaged aluminum gallium arsenide / indium gallium arsenide (AlGaAs / InGaAs) pseudomorphic high electron mobility transistor (pHEMT). It utilizes a 0.25µm x 3000µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 um x 3000 um Schottky barrier gate and features Si3N4 passivation. Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
| Output Power at 1-dB Compression | 28-29 dBm |
|---|---|
| Power Gain at 1-dB Compression | 14-15 dB |
| Maximum Drain-Source Current | 1760 mA |
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
Proper Electrostatic Discharge (ESD) precautions should be observed, and they should be treated as Class 1A (0-500 V).