The LP3000P100 is a high-power pHEMT device from Filss. It has an output power of 33 dBm, a power gain of 8 dB, and a power-added efficiency of 60%. It is designed for medium-power, linear amplification applications.
The document describes the Filtronic LP3000P100, a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It is designed for medium-power, linear amplification in commercial and military environments, including SATCOM uplink transmitters and digital radio systems.
| Output Power at 1-dB Compression | 33 dBm at 15 GHz |
|---|---|
| Power Gain at 1-dB Compression | 8 dB at 15 GHz |
| Power-Added Efficiency | 60% |
| Maximum Drain-Source Current (Icm) | 1700 mA |
| Total Power Dissipation | 3.0 W |
It is designed for medium-power, linear amplification in commercial and military environments.
It utilizes a 0.25 um x 3000 um Schottky barrier gate made of Aluminum Gallium Arsenide / Indium Gallium Arsenide.