Filtronic LP6836P100 is a solid-state packaged 0.25W power PHEMT product with features such as high power, low distortion, and high efficiency. It is suitable for commercial and military high-performance power amplifiers, including SATCOM uplink transmitters and medium-haul digital radio transmitters.
The LP6836P100 is a packaged AlGaAs/InGaAs pseudomorphic high‑electron‑mobility transistor (PHEMT) designed for high‑power applications such as SATCOM uplink transmitters and medium‑haul digital radio transmitters. It features a 0.25 µm Schottky barrier gate, low intermodulation distortion, and color‑coded packages by I_DSS range.
Key performance figures include typical output power of +24.5 dBm at 15 GHz, 12 dB gain, and 55 % power‑added efficiency. Absolute maximum ratings and recommended continuous operating limits are provided, along with handling precautions that require strict ESD control and classification as Class 1A (0‑500 V).
| Typical Output Power at 15 GHz | +24.5 dBm |
|---|---|
| Typical Power Gain at 15 GHz | 12 dB |
| Power‑Added Efficiency | 55 % |
| Storage Temperature Range | -65 °C to 175 °C |
| Recommended Continuous Power Dissipation | 1.1 W (de‑rated with temperature) |
The device delivers a typical output power of +24.5 dBm at 15 GHz.
It achieves a power‑added efficiency of 55 %.
The recommended continuous power dissipation is 1.1 W, de‑rated by 9 mW per °C above the heatsink temperature.