LP3000/LPV3000 Solid State 2W Power PHEMT Phone: (408) 988-1845 Internet: http://www.filtronicsolidstate.com Fax: (408) 970-9950 FEATURES • +33.5 dBm Typical Power at 18 GHz • 7 dB Typical Power Gain at 18 GHz • +30.5 dBm at 3.3V Battery Voltage • Low Intermodulation Distortion • 45% Power-Added-Efficiency at 18 GHz DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE THICKNESS: 2.6 mils (65 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.) DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package. Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned
This document describes the Filtronic LP3000 and LPV3000, which are Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistors (PHEMT). These devices utilize an electron-beam direct-write Schottky barrier gate and are optimized for reliable high-power applications in commercial and military sectors, such as SATCOM uplink transmitters and digital radio transmitters. The LPV3000 variant features plated source via-holes for improved high-frequency performance.
| Typical Power at 18 GHz | 433.5 dBm |
|---|---|
| Typical Power Gain at 18 GHz | 7B (typ.) |
| Power-Added-Efficiency at 18 GHz | 45% |
| Power-Added Efficiency (Class A) | 45% |
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere.
Thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire.