STE26N50 is an N-channel enhancement mode power MOS transistor in ISOTOP package. It features high current, large power, ultra low RDS(on), extremely low Rthj-case and so on. The transistor is suitable for SMPS, UPS, motor control, welding equipment and other industrial applications.
This document is a datasheet for the STE26N50, a high current power module N-channel enhancement mode power MOS transistor. It is housed in an ISOTOP package and features avalanche rugged technology with a very large Safe Operating Area (SOA). Key characteristics include a drain-source voltage rating of 500V and a continuous drain current of 26A at 25°C. The device is designed for industrial applications such as SMPS, UPS, motor control, and welding equipment.