SGS-THOMSON STE36N50 N-Channel Enhancement Mode Power MOS Transistor Datasheet


SGS-THOMSON STE36N50 N-Channel Enhancement Mode Power MOS Transistor Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
248 KB
Published
10 August, 2012
Updated
29 August, 2012
MD5 checksum
8D4495449AA17363F1EDDE770ABEF39A

About this manual

This document is a datasheet for the SGS-THOMSON STE36N50, an N-Channel Enhancement Mode Power MOS Transistor housed in an ISOTOP package. The device features avalanche rugged technology and is designed for high current applications, offering a drain-source voltage rating of 500 V and a continuous drain current of 36 A at 25 °C.

What's inside

  • Industrial Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics
  • Dynamic Characteristics
  • Safe Operating Area
  • Derating Curve
  • Output Characteristics
  • Capacitance Variations
  • Test Circuits

Specifications

Max. Operating Junction Temperature150 °C

Frequently asked questions

What is the maximum junction temperature?

The maximum operating junction temperature is 150 °C.

Is the package UL recognized?

Yes, the ISOTOP package is UL recognized with File No. E81 743.

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