STGP10NB60S is a N-channel MOSFET with a rated voltage of 600V and a maximum current of 10A. It is packaged in a TO-220 package. This device features high input impedance, very low on-voltage drop, high current capability and low off-losses. It is suitable for applications such as light dimming, static relays and motor control.
This document is a technical datasheet for the STMicroelectronics STGP10NB60S N-channel IGBT. The device utilizes PowerMESH™ technology with a patented strip layout to achieve minimum on-voltage drop, making it optimized for low frequency applications below 1kHz.
The datasheet provides absolute maximum ratings, thermal data, and detailed electrical characteristics including switching losses and capacitance variations. It also includes graphical representations of output characteristics, transfer curves, and safe operating areas, along with mechanical dimensions for the TO-220 package.
| Reverse Battery Protection | 20 V |
|---|---|
| Gate-Emitter Voltage | +20 V |
| Collector Current (continuous) at 25°C | 20 A |
| Collector Current (continuous) at 100°C | 10 A |
| Total Dissipation at 25°C | 80 W |
| Derating Factor | 0.64 W/°C |
| Storage Temperature Range | -65 to 150 °C |
| Max. Operating Junction Temperature | 150 °C |
| Thermal Resistance Junction-case | 1.56 °C/W |
The STGP10NB60S is designed for use in light dimmers, static relays, and motor control circuits.
The continuous collector current rating is 20 A when the case temperature is 25 °C.
The STGP10NB60S is available in a TO-220 package.