The document describes the features and characteristics of the OP165W product.
The document describes the OP165W as a 935nm high intensity gallium arsenide (GaAs) infrared emitting diode molded in an IR transmissive amber tinted epoxy package. It features a wide irradiance pattern and is mechanically and spectrally matched to the OP505W model.
| Wavelength at Peak Emission | 935 nm |
|---|---|
| Forward Voltage (Typical) | 1.60 V |
| Reverse Current (Max) | 100 pA |
| Emission Angle at Half Power Points | 90 Deg. |
| Spectral Bandwidth Between Half Power Points | 50 nm |
The device operates between -40° C and +100° C.